BUK9M15-40HX
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Nexperia USA Inc. BUK9M15-40HX

Manufacturer No:
BUK9M15-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK9M15-40HX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 30A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:16.2 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1026 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):44W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number BUK9M15-40HX BUK9M11-40HX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 10A, 10V 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16.2 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±16V +16V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1026 pF @ 25 V 1345 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 44W (Ta) 50W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

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