BUK9M10-30EX
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Nexperia USA Inc. BUK9M10-30EX

Manufacturer No:
BUK9M10-30EX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK9M10-30EX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 54A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:7.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12.2 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1249 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number BUK9M10-30EX BUK9M17-30EX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 15A, 10V 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12.2 nC @ 5 V 8 nC @ 5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 1249 pF @ 25 V 725 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 55W (Tc) 44W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

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