BUK98150-55A/CUF
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Nexperia USA Inc. BUK98150-55A/CUF

Manufacturer No:
BUK98150-55A/CUF
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK98150-55A/CUF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 5.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:137mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BUK98150-55A/CUF BUK98150-55/CUF  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V
Rds On (Max) @ Id, Vgs 137mOhm @ 5A, 10V 150mOhm @ 5A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 5 V -
Vgs (Max) ±15V ±10V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 25 V 330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 8W (Tc) 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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