Nexperia USA Inc.-BUK965R8-100E,118 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	5.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	133 nC @ 5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	17460 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	357W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Nexperia USA Inc. BUK965R8-100E,118