BUK9518-55A,127
  • Share:

Nexperia USA Inc. BUK9518-55A,127

Manufacturer No:
BUK9518-55A,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Datasheet:
BUK9518-55A,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 61A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2210 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
124

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK9518-55A,127 BUK9528-55A,127   BUK9508-55A,127   BUK9510-55A,127   BUK9511-55A,127   BUK9514-55A,127   BUK9516-55A,127   BUK9518-55,127  
Manufacturer Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 40A (Tc) 75A (Tc) 75A (Tc) 75A (Ta) 73A (Tc) 66A (Tc) 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V - 4.5V, 10V 5V, 10V 5V
Rds On (Max) @ Id, Vgs 16mOhm @ 25A, 10V 28mOhm @ 20A, 5V 7.5mOhm @ 25A, 10V 9mOhm @ 25A, 10V 10mOhm @ 25A, 10V 13mOhm @ 25A, 10V 15mOhm @ 25A, 10V 18mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 5 V - 92 nC @ 5 V 68 nC @ 5 V - - - -
Vgs (Max) ±15V ±10V ±15V ±15V ±10V ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V 1700 pF @ 25 V 6021 pF @ 25 V 4307 pF @ 25 V 4230 pF @ 25 V 3307 pF @ 25 V 3085 pF @ 25 V 2600 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 136W (Tc) 99W (Tc) 253W (Tc) 200W (Tc) 166W (Ta) 149W (Tc) 138W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

MGSF3442XT1
MGSF3442XT1
onsemi
SMALL SIGNAL N-CHANNEL MOSFET
2SK2851TZ-E
2SK2851TZ-E
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
AOB125A60L
AOB125A60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 28A TO263
APT30M70BVRG
APT30M70BVRG
Microchip Technology
MOSFET N-CH 300V 48A TO247
PJD13N10A_L2_00001
PJD13N10A_L2_00001
Panjit International Inc.
100V N-CHANNEL MOSFET
DMP1012UFDF-7
DMP1012UFDF-7
Diodes Incorporated
MOSFET P-CH 12V 12.6A/20A 6UDFN
TK9A55DA(STA4,Q,M)
TK9A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 8.5A TO220SIS
BSZ088N03MSG
BSZ088N03MSG
Infineon Technologies
BSZ088N03 - 12V-300V N-CHANNEL P
IRFU3303
IRFU3303
Infineon Technologies
MOSFET N-CH 30V 33A IPAK
IRLR120NPBF
IRLR120NPBF
Infineon Technologies
MOSFET N-CH 100V 10A DPAK
IRF3805SPBF
IRF3805SPBF
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
AOI1N60L
AOI1N60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 1.3A TO251A

Related Product By Brand

PESD5V0V1BLSYL
PESD5V0V1BLSYL
Nexperia USA Inc.
PESD5V0V1BLS/SOD882BD/XSON2
BAT160A,115
BAT160A,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 60V SOT223
PMEG3005AEA,115
PMEG3005AEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SOD323
PMEG4010EJ,115
PMEG4010EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD323F
BC846B/DG/B3,235
BC846B/DG/B3,235
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
PDTA123JT,215
PDTA123JT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
74AXP1G125GXH
74AXP1G125GXH
Nexperia USA Inc.
NEXPERIA 74AXP1G125 - LOW-POWER
74AHC244PW-Q100,11
74AHC244PW-Q100,11
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 20TSSOP
74HC4050DB,112
74HC4050DB,112
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SSOP
74LVC1G86GF,132
74LVC1G86GF,132
Nexperia USA Inc.
IC GATE XOR 1CH 2-INP 6XSON
74LVC08ADB,112
74LVC08ADB,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
74ABT20D,112
74ABT20D,112
Nexperia USA Inc.
IC GATE NAND 2CH 4-INP 14SO