BUK7Y21-40EX
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Nexperia USA Inc. BUK7Y21-40EX

Manufacturer No:
BUK7Y21-40EX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK7Y21-40EX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 33A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:617 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK7Y21-40EX BUK7Y29-40EX   BUK7M21-40EX   BUK7Y21-40E  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V 40 V 40 V -
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 26A (Tc) 33A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V 29mOhm @ 5A, 10V 21mOhm @ 10A, 10V -
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 7.9 nC @ 10 V 10.7 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 617 pF @ 25 V 492 pF @ 25 V 593 pF @ 25 V -
FET Feature - - - -
Power Dissipation (Max) 45W (Tc) 37W (Tc) 44W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK33 -
Package / Case SC-100, SOT-669 SC-100, SOT-669 SOT-1210, 8-LFPAK33 (5-Lead) -

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