BUK7S1R2-40HJ
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Nexperia USA Inc. BUK7S1R2-40HJ

Manufacturer No:
BUK7S1R2-40HJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK7S1R2-40HJ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 300A LFPAK88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:300A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:8420 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):294W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK88 (SOT1235)
Package / Case:SOT-1235
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Similar Products

Part Number BUK7S1R2-40HJ BUK7S1R5-40HJ   BUK7S1R0-40HJ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 300A (Ta) 260A (Ta) 325A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 25A, 10V 1.5mOhm @ 25A, 10V 1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA 3.6V @ 1mA 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V 93 nC @ 10 V 137 nC @ 10 V
Vgs (Max) +20V, -10V +20V, -10V +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 8420 pF @ 25 V 6712 pF @ 25 V 10322 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 294W (Ta) 242W (Ta) 375W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK88 (SOT1235) LFPAK88 (SOT1235) LFPAK88 (SOT1235)
Package / Case SOT-1235 SOT-1235 SOT-1235

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