BUK7E2R6-60E,127
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Nexperia USA Inc. BUK7E2R6-60E,127

Manufacturer No:
BUK7E2R6-60E,127
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
BUK7E2R6-60E,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 120A I2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:158 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):349W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number BUK7E2R6-60E,127 BUK7E4R6-60E,127  
Manufacturer Nexperia USA Inc. NXP Semiconductors
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V 4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V 82 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11180 pF @ 25 V 6230 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 349W (Tc) 234W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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