BUK7907-55ATE127
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Nexperia USA Inc. BUK7907-55ATE127

Manufacturer No:
BUK7907-55ATE127
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
BUK7907-55ATE127 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
FET Feature:Temperature Sensing Diode
Power Dissipation (Max):272W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-5
Package / Case:TO-220-5
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Similar Products

Part Number BUK7907-55ATE127 BUK7907-55ATE,127  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 50A, 10V 7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V 116 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 4500 pF @ 25 V
FET Feature Temperature Sensing Diode Temperature Sensing Diode
Power Dissipation (Max) 272W (Tc) 272W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-5 TO-220-5
Package / Case TO-220-5 TO-220-5

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