BUK751R8-40E,127
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Nexperia USA Inc. BUK751R8-40E,127

Manufacturer No:
BUK751R8-40E,127
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
BUK751R8-40E,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 120A TO220AB
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11340 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):349W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number BUK751R8-40E,127 BUK751R8-40E127  
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V 1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V 145 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11340 pF @ 25 V 11340 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 349W (Tc) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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