Nexperia USA Inc.-BUK6D385-100EX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	1.4A (Ta), 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	385mOhm @ 1.5, 10V
Vgs(th) (Max) @ Id:	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	195 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta), 15W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN2020MD-6
Package / Case:	6-UDFN Exposed Pad

Nexperia USA Inc. BUK6D385-100EX