Nexperia USA Inc.-BUK4D38-20PX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 8V
Rds On (Max) @ Id, Vgs:	33mOhm @ 6A, 8V
Vgs(th) (Max) @ Id:	1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	1025 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta), 19W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN2020MD-6
Package / Case:	6-UDFN Exposed Pad

Nexperia USA Inc. BUK4D38-20PX