BST82,215
  • Share:

Nexperia USA Inc. BST82,215

Manufacturer No:
BST82,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BST82,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 190MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
989

Please send RFQ , we will respond immediately.

Similar Products

Part Number BST82,215 BST82,235  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta) 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 150mA, 5V 10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AON7296
AON7296
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 5A/12.5A 8DFN
C3M0045065D
C3M0045065D
Wolfspeed, Inc.
GEN 3 650V 45 M SIC MOSFET
NDT452AP
NDT452AP
onsemi
MOSFET P-CH 30V 5A SOT-223-4
IRLS4030TRLPBF
IRLS4030TRLPBF
Infineon Technologies
MOSFET N-CH 100V 180A D2PAK
PJD16P06A-AU_L2_000A1
PJD16P06A-AU_L2_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IRFZ34STRLPBF
IRFZ34STRLPBF
Vishay Siliconix
MOSFET N-CH 60V 30A D2PAK
APT20M45SVFRG
APT20M45SVFRG
Microchip Technology
MOSFET N-CH 200V 56A D3PAK
IRFZ34
IRFZ34
Vishay Siliconix
MOSFET N-CH 60V 30A TO220AB
BSO064N03S
BSO064N03S
Infineon Technologies
MOSFET N-CH 30V 12A 8DSO
AO3424_102
AO3424_102
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V SOT23
PJD2NA60_L2_00001
PJD2NA60_L2_00001
Panjit International Inc.
600V N-CHANNEL MOSFET
RK7002T116
RK7002T116
Rohm Semiconductor
MOSFET N-CH 60V 115MA SST3

Related Product By Brand

PMEG6020EPASX
PMEG6020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A SOT1061
BZX84-C4V7,215
BZX84-C4V7,215
Nexperia USA Inc.
DIODE ZENER 4.7V 250MW TO236AB
PBSS303NZ,135
PBSS303NZ,135
Nexperia USA Inc.
TRANS NPN 30V 5.5A SOT223
BC846B/DG/B3,215
BC846B/DG/B3,215
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
74LVC162244ADGG,11
74LVC162244ADGG,11
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 48TSSOP
74HC245BQ-Q100X
74HC245BQ-Q100X
Nexperia USA Inc.
IC TXRX NON-INVERT 6V 20DHVQFN
74LVCH245AD-Q100J
74LVCH245AD-Q100J
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74HC02PW,118
74HC02PW,118
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP
74LVC2G08DP,125
74LVC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74AUP1G86GW,125
74AUP1G86GW,125
Nexperia USA Inc.
IC GATE XOR 1CH 2-INP 5TSSOP
NPIC6C4894D-Q100518
NPIC6C4894D-Q100518
Nexperia USA Inc.
SERIAL IN PARALLEL OUT
BUK7D25-40E,115
BUK7D25-40E,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR