Nexperia USA Inc.-BST62,115 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BST62,115	BSP62,115	BST52,115	BST60,115	BST61,115
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active	Active	Active
Transistor Type	PNP - Darlington	PNP - Darlington	NPN - Darlington	PNP - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	45 V	60 V
Vce Saturation (Max) @ Ib, Ic	1.3V @ 500µA, 500mA	1.3V @ 500µA, 500mA	1.3V @ 500µA, 500mA	1.3V @ 500µA, 500mA	1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max)	50nA	50nA	50nA	50nA	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V
Power - Max	1.3 W	1.25 W	1.3 W	1.3 W	1.3 W
Frequency - Transition	200MHz	200MHz	200MHz	200MHz	200MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-261-4, TO-261AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	SOT-89	SOT-223	SOT-89	SOT-89	SOT-89

Nexperia USA Inc. BST62,115

Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 500mA, 10V
Power - Max:	1.3 W
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89