Nexperia USA Inc.-BSS84AKQBZ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50 V
Current - Continuous Drain (Id) @ 25°C:	270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.6 nC @ 10 V
Vgs (Max):	+12V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	23.2 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	420mW (Ta), 4.2W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount, Wettable Flank
Supplier Device Package:	DFN1110D-3
Package / Case:	3-XDFN Exposed Pad

Nexperia USA Inc. BSS84AKQBZ