Nexperia USA Inc.-BSS138AKAR - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:	1.5V @ 250mA
Gate Charge (Qg) (Max) @ Vgs:	0.51 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	47 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	300mW (Ta), 1.06W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-236AB
Package / Case:	TO-236-3, SC-59, SOT-23-3

Nexperia USA Inc. BSS138AKAR