Nexperia USA Inc.-BSP89,115 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	240 V
Current - Continuous Drain (Id) @ 25°C:	375mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	5Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	120 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.5W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223
Package / Case:	TO-261-4, TO-261AA

Nexperia USA Inc. BSP89,115