BSP250,115
  • Share:

Nexperia USA Inc. BSP250,115

Manufacturer No:
BSP250,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BSP250,115 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.65W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.69
548

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP250,115 BSP250,135   BSP220,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 200 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc) 225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V 250mOhm @ 1A, 10V 12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 25 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 20 V 250 pF @ 20 V 90 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.65W (Ta) 1.65W (Ta) 1.5W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

HUF75639S3_NL
HUF75639S3_NL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IPD60R2K0PFD7SAUMA1
IPD60R2K0PFD7SAUMA1
Infineon Technologies
MOSFET N-CH 650V 3A TO252-3
SQD50P04-09L_GE3
SQD50P04-09L_GE3
Vishay Siliconix
MOSFET P-CH 40V 50A TO252
SISS67DN-T1-GE3
SISS67DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 60A PPAK1212-8S
PSMN1R2-30YLDX
PSMN1R2-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDD9409L-F085
FDD9409L-F085
onsemi
MOSFET N-CH 40V 90A TO252
SPP04N80C3XKSA1
SPP04N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 4A TO220-3
BUK9640-100A,118
BUK9640-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 39A D2PAK
STP100NF04
STP100NF04
STMicroelectronics
MOSFET N-CH 40V 120A TO220AB
SPB80P06P
SPB80P06P
Infineon Technologies
MOSFET P-CH 60V 80A TO263-3
IRFR3706CTRLPBF
IRFR3706CTRLPBF
Infineon Technologies
MOSFET N-CH 20V 75A DPAK
RQ7E055ATTCR
RQ7E055ATTCR
Rohm Semiconductor
MOSFET P-CH 30V 5.5A TSMT8

Related Product By Brand

PESD3V3L1UL,315
PESD3V3L1UL,315
Nexperia USA Inc.
TVS DIODE 3.3VWM 11VC SOD882
BZX585-B5V1,115
BZX585-B5V1,115
Nexperia USA Inc.
DIODE ZENER 5.1V 300MW SOD523
BZX79-C6V2,143
BZX79-C6V2,143
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW ALF2
BC806-25HVL
BC806-25HVL
Nexperia USA Inc.
TRANS PNP 80V 0.5A TO236AB
PDTA144EU,135
PDTA144EU,135
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
BUK7Y12-100EX
BUK7Y12-100EX
Nexperia USA Inc.
MOSFET N-CH 100V 85A LFPAK56
BUK9515-100A,127
BUK9515-100A,127
Nexperia USA Inc.
MOSFET N-CH 100V 75A TO220AB
74HC390PW,112
74HC390PW,112
Nexperia USA Inc.
IC DUAL DEC RIPPLE COUNT 16TSSOP
74HCU04PW,118
74HCU04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
74AUP2G132GF,115
74AUP2G132GF,115
Nexperia USA Inc.
IC GATE NAND 2CH 2IN 8XSON
74HCT257PW,112
74HCT257PW,112
Nexperia USA Inc.
IC MULTIPLEXER 4 X 2:1 16TSSOP
CBT3245ADB,112
CBT3245ADB,112
Nexperia USA Inc.
IC BUS SWITCH 8 X 1:1 20SSOP