BSP110,115
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Nexperia USA Inc. BSP110,115

Manufacturer No:
BSP110,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BSP110,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 520MA SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:520mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):6.25W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BSP110,115 BSP130,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 300 V
Current - Continuous Drain (Id) @ 25°C 520mA (Tc) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 150mA, 5V 6Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 6.25W (Tc) 1.5W (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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