BSN20,215
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Nexperia USA Inc. BSN20,215

Manufacturer No:
BSN20,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BSN20,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 50V 173MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:173mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:15Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSN20,215 BSN20,235  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 173mA (Ta) 173mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 100mA, 10V 15Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1V @ 1mA 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 10 V 25 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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