BSN20,215
  • Share:

Nexperia USA Inc. BSN20,215

Manufacturer No:
BSN20,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BSN20,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 50V 173MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:173mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:15Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
347

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSN20,215 BSN20,235  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 173mA (Ta) 173mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 100mA, 10V 15Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1V @ 1mA 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 10 V 25 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

2SJ166-T1B-A
2SJ166-T1B-A
Renesas Electronics America Inc
P-CHANNEL MOSFET
FW905-TL-E
FW905-TL-E
Sanyo
P-CHANNEL SILICON MOSFET
IRLL110TRPBF
IRLL110TRPBF
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
STW70N60DM6-4
STW70N60DM6-4
STMicroelectronics
MOSFET N-CH 600V 62A TO247-4
DMN2991UT-7
DMN2991UT-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT523 T&R
TK7S10N1Z,LXHQ
TK7S10N1Z,LXHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 7A DPAK
FQT3P20TF_SB82100
FQT3P20TF_SB82100
Fairchild Semiconductor
1-ELEMENT, P-CHANNEL POWER MOSFE
AUIRLS8409-7P
AUIRLS8409-7P
Infineon Technologies
AUIRLS8409 - 20V-40V N-CHANNEL A
IRF5803D2
IRF5803D2
Infineon Technologies
MOSFET P-CH 40V 3.4A 8SO
IRLR3105PBF
IRLR3105PBF
Infineon Technologies
MOSFET N-CH 55V 25A DPAK
SI3456BDV-T1-E3
SI3456BDV-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 4.5A 6TSOP
IPI530N15N3GXKSA1
IPI530N15N3GXKSA1
Infineon Technologies
MOSFET N-CH 150V 21A TO262-3

Related Product By Brand

PMEG4005EH,115
PMEG4005EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
PMEG2010AEH,115
PMEG2010AEH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD123F
BZX84-B6V8,215
BZX84-B6V8,215
Nexperia USA Inc.
DIODE ZENER 6.8V 250MW TO236AB
PMSS3904,135
PMSS3904,135
Nexperia USA Inc.
TRANS NPN 40V 0.1A SOT323
BCP56F
BCP56F
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BCP56HX
BCP56HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BUK7K6R2-40EX
BUK7K6R2-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A 56LFPAK
74HC4060PW,118
74HC4060PW,118
Nexperia USA Inc.
IC 14STAGE BINARY RIPPLE 16TSSOP
74HCT393DB,118
74HCT393DB,118
Nexperia USA Inc.
IC DUAL 4BIT BINARY RIPPL 14SSOP
74LVC2G74DP-Q100H
74LVC2G74DP-Q100H
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 8TSSOP
74ABT74DB,112
74ABT74DB,112
Nexperia USA Inc.
IC FF D-TYPE DUAL 1BIT 14SSOP
BAS21GW115
BAS21GW115
Nexperia USA Inc.
NOW NEXPERIA BAS21GW - HIGH-VOLT