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| Part Number | BSH203,215 | BSH205,215 | BSH103,215 | BSH201,215 | BSH202,215 |
|---|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | NXP USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
| Product Status | Active | Obsolete | Not For New Designs | Not For New Designs | Active |
| FET Type | P-Channel | P-Channel | N-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 12 V | 30 V | 60 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 470mA (Ta) | 750mA (Ta) | 850mA (Ta) | 300mA (Ta) | 520mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 2.5V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 280mA, 4.5V | 400mOhm @ 430mA, 4.5V | 400mOhm @ 500mA, 4.5V | 2.5Ohm @ 160mA, 10V | 900mOhm @ 280mA, 10V |
| Vgs(th) (Max) @ Id | 680mV @ 1mA (Typ) | 680mV @ 1mA (Typ) | 400mV @ 1mA (Min) | 1V @ 1mA (Min) | 1.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.5 V | 3.8 nC @ 4.5 V | 2.1 nC @ 4.5 V | 3 nC @ 10 V | 2.9 nC @ 10 V |
| Vgs (Max) | ±8V | ±8V | ±8V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 24 V | 200 pF @ 9.6 V | 83 pF @ 24 V | 70 pF @ 48 V | 80 pF @ 24 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 417mW (Ta) | 417mW (Ta) | 540mW (Ta) | 417mW (Ta) | 417mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | TO-236AB | SOT-23 (TO-236AB) | TO-236AB | TO-236AB | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
