Nexperia USA Inc.-BSH121,135 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	75 V
Current - Continuous Drain (Id) @ 25°C:	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	1 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	40 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	700mW (Tc)
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-323
Package / Case:	SC-70, SOT-323

Nexperia USA Inc. BSH121,135