Nexperia USA Inc.-BSH111BKR - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V
Rds On (Max) @ Id, Vgs:	4Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:	1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.5 nC @ 4.5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	30 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	302mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-236AB
Package / Case:	TO-236-3, SC-59, SOT-23-3

Nexperia USA Inc. BSH111BKR