BSH111,215
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Nexperia USA Inc. BSH111,215

Manufacturer No:
BSH111,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BSH111,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 335MA TO236AB
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 8 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH111,215 BSH114,215   BSH111,235  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 100 V 55 V
Current - Continuous Drain (Id) @ 25°C 335mA (Ta) 500mA (Ta) 335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 4.5V 500mOhm @ 500mA, 10V 4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA 4V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 8 V 4.6 nC @ 10 V 1 nC @ 8 V
Vgs (Max) ±10V ±20V ±10V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 138 pF @ 25 V 40 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 830mW (Tc) 360mW (Ta), 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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