BSH108,215
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Nexperia USA Inc. BSH108,215

Manufacturer No:
BSH108,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BSH108,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 1.9A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:120mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH108,215 BSH103,215   BSH105,215  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) 850mA (Ta) 1.05A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 2.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 10V 400mOhm @ 500mA, 4.5V 200mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 400mV @ 1mA (Min) 570mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 2.1 nC @ 4.5 V 3.9 nC @ 4.5 V
Vgs (Max) ±20V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 10 V 83 pF @ 24 V 152 pF @ 16 V
FET Feature - - -
Power Dissipation (Max) 830mW (Tc) 540mW (Ta) 417mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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