BSH103,235
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Nexperia USA Inc. BSH103,235

Manufacturer No:
BSH103,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BSH103,235 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 850MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V
Rds On (Max) @ Id, Vgs:400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):540mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH103,235 BSH105,235   BSH103,215  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 850mA (Ta) 1.05A (Ta) 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V 1.8V, 4.5V 2.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 4.5V 200mOhm @ 600mA, 4.5V 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 400mV @ 1mA (Min) 570mV @ 1mA (Typ) 400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 4.5 V 3.9 nC @ 4.5 V 2.1 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 24 V 152 pF @ 16 V 83 pF @ 24 V
FET Feature - - -
Power Dissipation (Max) 540mW (Ta) 417mW (Ta) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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