Nexperia USA Inc.-BCP69-25,115 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCP69-25,115	BCP69-25,135	BCP68-25,115
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active
Transistor Type	PNP	PNP	NPN
Current - Collector (Ic) (Max)	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	20 V	20 V	20 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A	600mV @ 200mA, 2A	600mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 500mA, 1V	100 @ 500mA, 1V	160 @ 500mA, 1V
Power - Max	650 mW	650 mW	650 mW
Frequency - Transition	140MHz	140MHz	170MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223	SOT-223

Nexperia USA Inc. BCP69-25,115

Transistor Type:	PNP
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	20 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 500mA, 1V
Power - Max:	650 mW
Frequency - Transition:	140MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223