BAV21,133
  • Share:

Nexperia USA Inc. BAV21,133

Manufacturer No:
BAV21,133
Manufacturer:
Nexperia USA Inc.
Package:
Cut Tape (CT)
Datasheet:
BAV21,133 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 200V 250MA ALF2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:ALF2
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.22
3,233

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAV21,133 BAV21,143   BAV20,133   BAV21,113  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package ALF2 ALF2 ALF2 ALF2
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

PMEG6020EPASX
PMEG6020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A SOT1061
SBYV28-100-E3/73
SBYV28-100-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3.5A DO201AD
SF1GDF-13
SF1GDF-13
Diodes Incorporated
SUPERFAST RECOVERY RECTIFIER D-F
FR305G
FR305G
SMC Diode Solutions
DIODE GPP 600V 3A DO201AD
PMEG40T50EP-QX
PMEG40T50EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
SE40PGHM3_A/I
SE40PGHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2.4A TO277A
V8PM10-M3/H
V8PM10-M3/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 8A TO277A
VS-MBRD320TRR-M3
VS-MBRD320TRR-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 3A 20V DPAK
S1D/1
S1D/1
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO214AC
VS-6TQ045PBF
VS-6TQ045PBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 6A TO220AC
UGF12JTHE3/45
UGF12JTHE3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 12A ITO220AC
1N8031-GA
1N8031-GA
GeneSiC Semiconductor
DIODE SCHOTTKY 650V 1A TO276

Related Product By Brand

BZV55-C2V7,135
BZV55-C2V7,135
Nexperia USA Inc.
DIODE ZENER 2.7V 500MW LLDS
BZX384-B47,115
BZX384-B47,115
Nexperia USA Inc.
DIODE ZENER 47V 300MW SOD323
SZMM5Z4V3T5GF
SZMM5Z4V3T5GF
Nexperia USA Inc.
SZMM5Z4V3T5G/SOD523/SC-79
BZT52-B6V8J
BZT52-B6V8J
Nexperia USA Inc.
DIODE ZENER 6.8V 590MW SOD123
BCP52-16,115
BCP52-16,115
Nexperia USA Inc.
TRANS PNP 60V 1A SOT223
PHP79NQ08LT,127
PHP79NQ08LT,127
Nexperia USA Inc.
MOSFET N-CH 75V 73A TO220AB
PH6930DL115
PH6930DL115
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
74LVC161D,118
74LVC161D,118
Nexperia USA Inc.
IC SYNC 4BIT BIN COUNTER 16SOIC
74LVC823ADB,112
74LVC823ADB,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 9BIT 24SSOP
74AUP1T86GWH
74AUP1T86GWH
Nexperia USA Inc.
IC GATE XOR 1CH 2IN 5TSSOP
74AUP1T00GX,125
74AUP1T00GX,125
Nexperia USA Inc.
LOW-POWER 2-INPUT NAND GATE WITH
74CBTLV1G125GW,125
74CBTLV1G125GW,125
Nexperia USA Inc.
IC BUS SWITCH 1 X 1:1 5TSSOP