BAS321/8X
  • Share:

Nexperia USA Inc. BAS321/8X

Manufacturer No:
BAS321/8X
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BAS321/8X Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 200V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
422

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS321/8X BAS321/8F  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

1N5617GP-E3/54
1N5617GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AC
2A05G
2A05G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
SBRA8160NT3G
SBRA8160NT3G
onsemi
DIODE SCHOTTKY 60V 1A 1202-SMB2
JANTX1N6643US/TR
JANTX1N6643US/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
UES1002SM/TR
UES1002SM/TR
Microchip Technology
RECTIFIER UFR,FRR
GP10GE-M3/54
GP10GE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
STPSC2H12B-TR1
STPSC2H12B-TR1
STMicroelectronics
DIODE SCHOTTKY 1.2KV 5A DPAK
SS320 M6G
SS320 M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
SFAF508GHC0G
SFAF508GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A ITO220AC
1N5394-AP
1N5394-AP
Micro Commercial Co
DIODE GPP 1.5A DO-15
BYWE29-150-E3/45
BYWE29-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V TO220AC
SRAF8150H
SRAF8150H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 8A ITO220AC

Related Product By Brand

PESD3V3L2UM,315
PESD3V3L2UM,315
Nexperia USA Inc.
TVS DIODE 3.3VWM 13VC DFN1006-3
PESD18VF1BLYL
PESD18VF1BLYL
Nexperia USA Inc.
TVS DIODE 18VWM 17VC DFN1006-2
BZB84-C10,215
BZB84-C10,215
Nexperia USA Inc.
DIODE ZENER ARRAY 10V SOT23
BZV55-C36,115
BZV55-C36,115
Nexperia USA Inc.
DIODE ZENER 36V 500MW LLDS
BZX79-B2V4,143
BZX79-B2V4,143
Nexperia USA Inc.
DIODE ZENER 2.4V 400MW ALF2
BZX84W-C6V8X
BZX84W-C6V8X
Nexperia USA Inc.
DIODE ZENER 6.8V 275MW SOT323
74LVC1G53DC,125
74LVC1G53DC,125
Nexperia USA Inc.
IC MUX/DEMUX 2X1 8VSSOP
74HCT540DB,112
74HCT540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 5.5V 20SSOP
74LVC1G86GW-Q100125
74LVC1G86GW-Q100125
Nexperia USA Inc.
XOR GATE, LVC/LCX/Z SERIES
CBT3257ADS,118
CBT3257ADS,118
Nexperia USA Inc.
IC MUX/DEMUX 4 X 2:1 16SSOP
PDZ12BGW,118
PDZ12BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P
BUK7Y3R5-40H,115
BUK7Y3R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR