BAS21QC-QZ
  • Share:

Nexperia USA Inc. BAS21QC-QZ

Manufacturer No:
BAS21QC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BAS21QC-QZ Datasheet
ECAD Model:
-
Description:
BAS21QC-Q/SOT8009/DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
Operating Temperature - Junction:150°C
0 Remaining View Similar

In Stock

$0.29
1,881

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS21QC-QZ BAS21QB-QZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1110D-3
Operating Temperature - Junction 150°C 150°C

Related Product By Categories

SK55
SK55
Diotec Semiconductor
SCHOTTKY SMB 50V 5A
SK110-TP
SK110-TP
Micro Commercial Co
DIODE SCHOTTKY 100V 1A DO214AA
1N4151WS-E3-08
1N4151WS-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 150MA SOD323
USB260HM3/52T
USB260HM3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
RSFJL M2G
RSFJL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
BYM10-600HE3/97
BYM10-600HE3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO213AB
NRVTS12120MFST3G
NRVTS12120MFST3G
onsemi
DIODE SCHOTTKY 120V 12A 5DFN
D2450N07TXPSA1
D2450N07TXPSA1
Infineon Technologies
DIODE GEN PURP 700V 2450A
G5S12010C
G5S12010C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
8ETL06
8ETL06
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO220AC
AU2PGHM3/86A
AU2PGHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.6A TO277A
BAV5004WSQ-7
BAV5004WSQ-7
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100

Related Product By Brand

PMEG6045ETP-QX
PMEG6045ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX38450-C4V3F
BZX38450-C4V3F
Nexperia USA Inc.
BZX38450-C4V3/SOD323/SOD2
BZX884S-C20YL
BZX884S-C20YL
Nexperia USA Inc.
BZX884S-C20/SOD882BD/XSON2
PUMH13F
PUMH13F
Nexperia USA Inc.
TRANS PREBIAS SOT363/SC88
PDTA124XT,215
PDTA124XT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
74HCT540D,653
74HCT540D,653
Nexperia USA Inc.
IC BUFFER INVERT 5.5V 20SO
74LVC2G38GS,115
74LVC2G38GS,115
Nexperia USA Inc.
IC GATE NAND OD 2CH 2-INP 8XSON
HEF4002BT,653
HEF4002BT,653
Nexperia USA Inc.
IC GATE NOR 2CH 4-INP 14SO
74AHC30D,112
74AHC30D,112
Nexperia USA Inc.
IC GATE NAND 1CH 8-INP 14SO
74HCT573BQ-Q100,11
74HCT573BQ-Q100,11
Nexperia USA Inc.
IC TRANSP LATCH OCTAL D 20DHVQFN
74HC154DB,112
74HC154DB,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X4:16 24SSOP
PESD12VV1BL
PESD12VV1BL
Nexperia USA Inc.
NOW NEXPERIA PESD12VV1BL - TRANS