2N7002P,235
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Nexperia USA Inc. 2N7002P,235

Manufacturer No:
2N7002P,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
2N7002P,235 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 360MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002P,235 2N7002,235   2N7002P,215  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta) 300mA (Tc) 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.5V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V - 0.8 nC @ 4.5 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 350mW (Ta) 830mW (Tc) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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