2N7002P,215
  • Share:

Nexperia USA Inc. 2N7002P,215

Manufacturer No:
2N7002P,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
2N7002P,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 360MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.27
1,417

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002P,215 2N7002P,235   2N7002T,215   2N7002,215   2N7002E,215   2N7002F,215   2N7002K,215  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta) 360mA (Ta) 300mA (Ta) 300mA (Ta) 385mA (Ta) 475mA (Ta) 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 3Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA 2.5V @ 1mA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V 0.8 nC @ 4.5 V - - 0.69 nC @ 10 V 0.69 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±30V ±30V ±30V ±15V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 40 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 40 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 350mW (Ta) 350mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB SOT-23 (TO-236AB) TO-236AB TO-236AB TO-236AB SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BUK9535-100A,127
BUK9535-100A,127
NXP USA Inc.
MOSFET N-CH 100V 41A TO220AB
SI1012CR-T1-GE3
SI1012CR-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V SC75A
ZXMN2A01E6TA
ZXMN2A01E6TA
Diodes Incorporated
MOSFET N-CH 20V 2.5A SOT23-6
IXFA30N60X
IXFA30N60X
IXYS
MOSFET N-CH 600V 30A TO263
IRF1404ZSTRR
IRF1404ZSTRR
Infineon Technologies
MOSFET N-CH 40V 180A D2PAK
IPD144N06NGBTMA1
IPD144N06NGBTMA1
Infineon Technologies
MOSFET N-CH 60V 50A TO252-3
IXTH16P20
IXTH16P20
IXYS
MOSFET P-CH 200V 16A TO247
IRL3715ZSTRRPBF
IRL3715ZSTRRPBF
Infineon Technologies
MOSFET N-CH 20V 50A D2PAK
RJK4532DPD-00#J2
RJK4532DPD-00#J2
Renesas Electronics America Inc
MOSFET N-CH 450V 4A MP3A
MCH6437-TL-W
MCH6437-TL-W
onsemi
MOSFET N-CH 20V 7A SC88FL/MCPH6
TSM3N80CZ C0G
TSM3N80CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 3A TO220
R6030ENZ1C9
R6030ENZ1C9
Rohm Semiconductor
MOSFET N-CH 600V 30A TO247

Related Product By Brand

PESD3V3Y1BSFYL
PESD3V3Y1BSFYL
Nexperia USA Inc.
TVS DIODE DSN0603-2
PESD5V0S1UJ,115
PESD5V0S1UJ,115
Nexperia USA Inc.
TVS DIODE 5VWM 19VC SOD323F
PMEG6002ELDYL
PMEG6002ELDYL
Nexperia USA Inc.
DIODE SCHOTTKY 60V 200MA SOD882D
BZX884-B9V1,315
BZX884-B9V1,315
Nexperia USA Inc.
DIODE ZENER 9.1V 250MW DFN1006-2
BZX84-C15/DG/B3,21
BZX84-C15/DG/B3,21
Nexperia USA Inc.
DIODE ZENER 14.7V 250MW TO236AB
2PD601ASL,215
2PD601ASL,215
Nexperia USA Inc.
TRANS NPN 50V 0.1A TO236AB
PMPB16XNEA115
PMPB16XNEA115
Nexperia USA Inc.
N-CHANNEL POWER MOSFET
BUK9Y11-80EX
BUK9Y11-80EX
Nexperia USA Inc.
MOSFET N-CH 80V 84A LFPAK56
74AHC1G17GVH
74AHC1G17GVH
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V SC74A
74HC244PW-Q100,118
74HC244PW-Q100,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20TSSOP
74HCT175DB,118
74HCT175DB,118
Nexperia USA Inc.
IC FF D-TYPE SNGL 4BIT 16SSOP
74AUP1G18GF,132
74AUP1G18GF,132
Nexperia USA Inc.
IC DEMULTIPLEXER 1 X 1:2 6XSON