2N7002NXBKR
  • Share:

Nexperia USA Inc. 2N7002NXBKR

Manufacturer No:
2N7002NXBKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
2N7002NXBKR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 270MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta), 330mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.22
1,244

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002NXBKR 2N7002NXAKR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta), 330mA (Tc) 190mA (Ta), 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 0.43 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.6 pF @ 10 V 20 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc) 265mW (Ta), 1.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

RFL1N15L
RFL1N15L
Harris Corporation
N-CHANNEL POWER MOSFET
NP82N04MLG-S18-AY
NP82N04MLG-S18-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 82A TO220-3
HUF75631S3ST
HUF75631S3ST
Fairchild Semiconductor
MOSFET N-CH 100V 33A D2PAK
IRFZ44ESTRLPBF
IRFZ44ESTRLPBF
Infineon Technologies
MOSFET N-CH 60V 48A D2PAK
IRF710PBF
IRF710PBF
Vishay Siliconix
MOSFET N-CH 400V 2A TO220AB
GA10JT12-263
GA10JT12-263
GeneSiC Semiconductor
TRANS SJT 1200V 25A
STB80NF03L-04T4
STB80NF03L-04T4
STMicroelectronics
MOSFET N-CH 30V 80A D2PAK
STH145N8F7-2AG
STH145N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 90A H2PAK-2
FCH47N60-F085
FCH47N60-F085
onsemi
MOSFET N-CH 600V 47A TO247-3
SPI16N50C3HKSA1
SPI16N50C3HKSA1
Infineon Technologies
MOSFET N-CH 560V 16A TO262-3
IRFB4115GPBF
IRFB4115GPBF
Infineon Technologies
MOSFET N-CH 150V 104A TO220AB
IPS040N03LGAKMA1
IPS040N03LGAKMA1
Infineon Technologies
MOSFET N-CH 30V 90A TO251-3

Related Product By Brand

BZX84-B4V7,215
BZX84-B4V7,215
Nexperia USA Inc.
DIODE ZENER 4.7V 250MW TO236AB
BZV55-C2V4,135
BZV55-C2V4,135
Nexperia USA Inc.
DIODE ZENER 2.4V 500MW LLDS
BZX38450-C33F
BZX38450-C33F
Nexperia USA Inc.
BZX38450-C33/SOD323/SOD2
BZX384-C12,115
BZX384-C12,115
Nexperia USA Inc.
DIODE ZENER 12V 300MW SOD323
PBLS2021D,115
PBLS2021D,115
Nexperia USA Inc.
NEXPERIA PBLS2021D - SMALL SIGNA
74LVC1G53GM,125
74LVC1G53GM,125
Nexperia USA Inc.
NEXPERIA 74LVC1G53 - 2-CHANNEL A
74AHC1G125GF,132
74AHC1G125GF,132
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V 6XSON
74HC161D-Q100J
74HC161D-Q100J
Nexperia USA Inc.
IC SYNC 4BIT BINARY COUNT
74LV132PW-Q100J
74LV132PW-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14TSSOP
74HC138DB,118
74HC138DB,118
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16SSOP
TL431BQDBZR,215
TL431BQDBZR,215
Nexperia USA Inc.
IC VREF SHUNT ADJ 0.5% TO236AB
74LVC373ADB112
74LVC373ADB112
Nexperia USA Inc.
NOW NEXPERIA 74LVC373ADB - BUS D