2N7002NXBKR
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Nexperia USA Inc. 2N7002NXBKR

Manufacturer No:
2N7002NXBKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
2N7002NXBKR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 270MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta), 330mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002NXBKR 2N7002NXAKR  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta), 330mA (Tc) 190mA (Ta), 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 0.43 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.6 pF @ 10 V 20 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc) 265mW (Ta), 1.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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