2N7002E,215
  • Share:

Nexperia USA Inc. 2N7002E,215

Manufacturer No:
2N7002E,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
2N7002E,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 385MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:385mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.69 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
451

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002E,215 2N7002P,215   2N7002F,215   2N7002K,215   2N7002T,215   2N7002,215  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 385mA (Ta) 360mA (Ta) 475mA (Ta) 340mA (Ta) 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3.9Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.4V @ 250µA 2.5V @ 250µA 2V @ 1mA 2.5V @ 1mA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.69 nC @ 10 V 0.8 nC @ 4.5 V 0.69 nC @ 10 V - - -
Vgs (Max) ±30V ±20V ±30V ±15V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 40 pF @ 10 V 40 pF @ 10 V 50 pF @ 10 V
FET Feature - - - - - -
Power Dissipation (Max) 830mW (Ta) 350mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB SOT-23 (TO-236AB) SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STU6N95K5
STU6N95K5
STMicroelectronics
MOSFET N-CH 950V 9A IPAK
2SK2371(2)-A
2SK2371(2)-A
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IMW120R220M1HXKSA1
IMW120R220M1HXKSA1
Infineon Technologies
SICFET N-CH 1.2KV 13A TO247-3
SI2392ADS-T1-BE3
SI2392ADS-T1-BE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET
BUK6D43-40PX
BUK6D43-40PX
Nexperia USA Inc.
MOSFET P-CH 40V 6A DFN2020MD-6
YJL2301F-F2-0000HF
YJL2301F-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
P-CH MOSFET 20V 2A SOT-23-3L
BUK754R3-75C,127
BUK754R3-75C,127
NXP USA Inc.
MOSFET N-CH 75V 100A TO220AB
IRF820STRR
IRF820STRR
Vishay Siliconix
MOSFET N-CH 500V 2.5A D2PAK
IRL3714S
IRL3714S
Infineon Technologies
MOSFET N-CH 20V 36A D2PAK
BUK7905-40ATE,127
BUK7905-40ATE,127
Nexperia USA Inc.
MOSFET N-CH 40V 75A TO220-5
BUK9575-55A,127
BUK9575-55A,127
Nexperia USA Inc.
MOSFET N-CH 55V 20A TO220AB
SI4320DY-T1-E3
SI4320DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 17A 8SO

Related Product By Brand

PESD1ETH1GXLS-QYL
PESD1ETH1GXLS-QYL
Nexperia USA Inc.
PESD1ETH1GXLS-Q/SOD882BD/XSON2
BAV99S/DG/B3,115
BAV99S/DG/B3,115
Nexperia USA Inc.
DIODE ARRAY GP 100V 200MA SOT363
BZX384-C24,115
BZX384-C24,115
Nexperia USA Inc.
DIODE ZENER 24V 300MW SOD323
BZX8450-C24-QVL
BZX8450-C24-QVL
Nexperia USA Inc.
BZX8450-C24-Q/SOT23/TO-236AB
BZX585-B9V1,115
BZX585-B9V1,115
Nexperia USA Inc.
DIODE ZENER 9.1V 300MW SOD523
PBSS302NDH
PBSS302NDH
Nexperia USA Inc.
TRANS NPN 40V 4A 6TSOP
NX7002AKW,115
NX7002AKW,115
Nexperia USA Inc.
MOSFET N-CH 60V 170MA SOT323
PMPB23XNEZ
PMPB23XNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 7A 6DFN
74LVC2G241GM,125
74LVC2G241GM,125
Nexperia USA Inc.
74LVC2G241 - DUAL BUFFER/LINE DR
74AHC2G32DP,125
74AHC2G32DP,125
Nexperia USA Inc.
IC GATE OR 2CH 2-INP 8TSSOP
74HCT02D-Q100,118
74HCT02D-Q100,118
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14SO
74AHCT3G14DP,125
74AHCT3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP