2N7002BKMB,315
  • Share:

Nexperia USA Inc. 2N7002BKMB,315

Manufacturer No:
2N7002BKMB,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
2N7002BKMB,315 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 450MA DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

-
444

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002BKMB,315 2N7002BKM,315  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 450mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 SOT-883
Package / Case 3-XFDFN SC-101, SOT-883

Related Product By Categories

CSD17313Q2Q1
CSD17313Q2Q1
Texas Instruments
MOSFET N-CH 30V 5A 6WSON
NDP6060L
NDP6060L
onsemi
MOSFET N-CH 60V 48A TO220-3
BUK9M5R2-30E115
BUK9M5R2-30E115
Nexperia USA Inc.
N-CHANNEL POWER MOSFET
PJF60R290E_T0_00001
PJF60R290E_T0_00001
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
STW19NM60N
STW19NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO247
FCB099N65S3
FCB099N65S3
onsemi
MOSFET N-CH 650V 30A D2PAK-3
94-2110
94-2110
Infineon Technologies
MOSFET N-CH 40V 162A D2PAK
IRFZ48ZL
IRFZ48ZL
Infineon Technologies
MOSFET N-CH 55V 61A TO262
IXFN44N50U3
IXFN44N50U3
IXYS
MOSFET N-CH 500V 44A SOT-227B
NTB6412ANT4G
NTB6412ANT4G
onsemi
MOSFET N-CH 100V 58A D2PAK
FDB035AN06A0-F085
FDB035AN06A0-F085
onsemi
MOSFET N-CH 60V 22A D2PAK
RQ6G050ATTCR
RQ6G050ATTCR
Rohm Semiconductor
PCH -30V -5A POWER MOSFET - RQ6G

Related Product By Brand

PESD2ETH100-TR
PESD2ETH100-TR
Nexperia USA Inc.
TVS DIODE 24VWM SOT23
PESD5V0S5UD,115
PESD5V0S5UD,115
Nexperia USA Inc.
TVS DIODE 5VWM 13VC 6TSOP
PMEG4030ETP,115
PMEG4030ETP,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD128
PMEG4002AESFYL
PMEG4002AESFYL
Nexperia USA Inc.
DIODE SCHOT 40V 200MA DSN0603-2
BZT52H-B36,115
BZT52H-B36,115
Nexperia USA Inc.
DIODE ZENER 36V 375MW SOD123F
BZX84-C33/DG/B2,21
BZX84-C33/DG/B2,21
Nexperia USA Inc.
DIODE ZENER 33V 250MW TO236AB
PBSS4350SSJ
PBSS4350SSJ
Nexperia USA Inc.
TRANS 2NPN 50V 2.7A 8SOIC
BUK9Y15-100E,115
BUK9Y15-100E,115
Nexperia USA Inc.
MOSFET N-CH 100V 69A LFPAK56
74HC4067PW-Q100J
74HC4067PW-Q100J
Nexperia USA Inc.
IC MUX/DEMUX 1X16 24TSSOP
74LVT2241DB,112
74LVT2241DB,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 20SSOP
74HC4060D,652
74HC4060D,652
Nexperia USA Inc.
IC COUNTER 14STAGE BIN OSC16SOIC
74LVC377PW,112
74LVC377PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP