Microsemi Corporation-SD1444 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Part Number	SD1444	SD1446
Manufacturer	Microsemi Corporation	STMicroelectronics
Product Status	Obsolete	Obsolete
Transistor Type	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	16V	18V
Frequency - Transition	450MHz ~ 512MHz	-
Noise Figure (dB Typ @ f)	-	-
Gain	8dB	10dB
Power - Max	5W	183W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 50mA, 5V	10 @ 5A, 5V
Current - Collector (Ic) (Max)	400mA	12A
Operating Temperature	200°C (TJ)	200°C (TJ)
Mounting Type	Through Hole	Surface Mount
Package / Case	TO-205AD, TO-39-3 Metal Can	M113
Supplier Device Package	TO-39	M113

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	16V
Frequency - Transition:	450MHz ~ 512MHz
Noise Figure (dB Typ @ f):	-
Gain:	8dB
Power - Max:	5W
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 50mA, 5V
Current - Collector (Ic) (Max):	400mA
Operating Temperature:	200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39

Microsemi Corporation SD1444