MSD75-12
  • Share:

Microsemi Corporation MSD75-12

Manufacturer No:
MSD75-12
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
MSD75-12 Datasheet
ECAD Model:
-
Description:
BRIDGE RECT 3PHASE 1.2KV 75A SM2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Three Phase
Technology:Standard
Voltage - Peak Reverse (Max):1.2 kV
Current - Average Rectified (Io):75 A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 150 A
Current - Reverse Leakage @ Vr:300 µA @ 1200 V
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:M2
Supplier Device Package:SM2
0 Remaining View Similar

In Stock

-
291

Please send RFQ , we will respond immediately.

Similar Products

Part Number MSD75-12 MSD75-16  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
Diode Type Three Phase Three Phase
Technology Standard Standard
Voltage - Peak Reverse (Max) 1.2 kV 1.6 kV
Current - Average Rectified (Io) 75 A 75 A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 150 A 1.6 V @ 150 A
Current - Reverse Leakage @ Vr 300 µA @ 1200 V 300 µA @ 1600 V
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case M2 M2
Supplier Device Package SM2 SM2

Related Product By Categories

GBPC3504T
GBPC3504T
GeneSiC Semiconductor
BRIDGE RECT 1P 400V 35A GBPC-T
GBJ20J
GBJ20J
SURGE
20A -600V - GBJ(5S) - BRIDGE
B250C1000G-E4/51
B250C1000G-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 400V 1A WOG
B380C1500G-E4/51
B380C1500G-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 1.5A WOG
TS40P06GH
TS40P06GH
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 40A TS-6P
SLDB157S
SLDB157S
Rectron USA
BRDGE RCT GLASS 1000V 1.5A SLDBS
LDB104S
LDB104S
Rectron USA
BRIDGE RECT GLASS 400V 1A DB-LS
RS401L
RS401L
Rectron USA
BRIDGE RECT GLASS 50V 4A RS-4L
SC50VB160-G
SC50VB160-G
Comchip Technology
BRIDGE RECT 3P 1.6KV 50A SCVB
DSRHD10-13
DSRHD10-13
Diodes Incorporated
BRIDGE RECT 1P 1KV 1A 4-TMINIDIP
GBPC35005M T0G
GBPC35005M T0G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 50V 35A GBPC-M
DBL101G
DBL101G
Taiwan Semiconductor Corporation
DIODE BRIDGE 1A 50V DBL

Related Product By Brand

JANTXV1N6114US
JANTXV1N6114US
Microsemi Corporation
TVS DIODE 16.7VWM 32.03V SQ-MELF
MXLP5KE150AE3
MXLP5KE150AE3
Microsemi Corporation
TVS DIODE 150VWM 243VC DO204AL
MPLAD6.5KP51A
MPLAD6.5KP51A
Microsemi Corporation
TVS DIODE 51VWM 82.4VC PLAD
1N5951CE3/TR13
1N5951CE3/TR13
Microsemi Corporation
DIODE ZENER 120V 1.5W DO204AL
SMBJ5955BE3/TR13
SMBJ5955BE3/TR13
Microsemi Corporation
DIODE ZENER 180V 2W SMBJ
1PMT5914E3/TR7
1PMT5914E3/TR7
Microsemi Corporation
DIODE ZENER 3.6V 3W DO216AA
2EZ100D10E3/TR8
2EZ100D10E3/TR8
Microsemi Corporation
DIODE ZENER 100V 2W DO204AL
2EZ5.1D2/TR8
2EZ5.1D2/TR8
Microsemi Corporation
DIODE ZENER 5.1V 2W DO204AL
2EZ51D2E3/TR8
2EZ51D2E3/TR8
Microsemi Corporation
DIODE ZENER 51V 2W DO204AL
3EZ22D2/TR8
3EZ22D2/TR8
Microsemi Corporation
DIODE ZENER 22V 3W DO204AL
1N5274A (DO-35)
1N5274A (DO-35)
Microsemi Corporation
DIODE ZENER 130V 500MW DO35
MRF586G
MRF586G
Microsemi Corporation
RF TRANS NPN 17V 3GHZ TO39