MSC280SMA120S
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Microsemi Corporation MSC280SMA120S

Manufacturer No:
MSC280SMA120S
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
MSC280SMA120S Datasheet
ECAD Model:
-
Description:
SICFET N-CH 1.2KV D3PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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In Stock

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Similar Products

Part Number MSC280SMA120S MSC080SMA120S   MSC180SMA120S  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology
Product Status Obsolete Active Active
FET Type N-Channel N-Channel -
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) -
Drain to Source Voltage (Vdss) 1200 V 1200 V -
Current - Continuous Drain (Id) @ 25°C - 35A -
Drive Voltage (Max Rds On, Min Rds On) - 20V -
Rds On (Max) @ Id, Vgs - 100mOhm @ 15A, 20V -
Vgs(th) (Max) @ Id - 2.8V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs - 64 nC @ 20 V -
Vgs (Max) - +23V, -10V -
Input Capacitance (Ciss) (Max) @ Vds - 838 pF @ 1000 V -
FET Feature - - -
Power Dissipation (Max) - 182W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Supplier Device Package D3PAK D3PAK -
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA -

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