MS108E3/TR8
  • Share:

Microsemi Corporation MS108E3/TR8

Manufacturer No:
MS108E3/TR8
Manufacturer:
Microsemi Corporation
Package:
Tape & Reel (TR)
Datasheet:
MS108E3/TR8 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 80V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:810 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 80 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
313

Please send RFQ , we will respond immediately.

Similar Products

Part Number MS108E3/TR8 MS109E3/TR8   MS104E3/TR8   MS105E3/TR8   MS106E3/TR8  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 80 V 90 V 40 V 50 V 60 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 810 mV @ 1 A 810 mV @ 1 A 690 mV @ 1 A 690 mV @ 1 A 690 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 100 µA @ 80 V 100 µA @ 90 V 100 µA @ 40 V 100 µA @ 50 V 100 µA @ 60 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

RS1JAL
RS1JAL
Taiwan Semiconductor Corporation
250NS, 1A, 600V, FAST RECOVERY R
SA262
SA262
Diotec Semiconductor
DIODE FR MELF 1400V 2A
STTH1202DI
STTH1202DI
STMicroelectronics
DIODE GEN PURP 200V 12A TO220AC
MMBD3004 RFG
MMBD3004 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 350V 225MA SOT23
S24F-F1-0000HF
S24F-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 2A SMAF
6A10-T
6A10-T
Diodes Incorporated
DIODE GEN PURP 1KV 6A R6
DSS25-0025B
DSS25-0025B
IXYS
DIODE SCHOTTKY 25V 25A TO220AC
RGP10DE-M3/73
RGP10DE-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
UH2CHE3_A/I
UH2CHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 2A DO214AA
STTH80S06W
STTH80S06W
STMicroelectronics
DIODE GEN PURP 600V 80A DO247
SRA860
SRA860
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 8A TO220AC
SCS302APC9
SCS302APC9
Rohm Semiconductor
DIODE SCHOTTKY 650V 2A TO220-2

Related Product By Brand

SMCJ5630AE3/TR13
SMCJ5630AE3/TR13
Microsemi Corporation
TVS DIODE 6.4VWM 11.3VC DO214AB
1N5922CG
1N5922CG
Microsemi Corporation
DIODE ZENER 7.5V 1.25W DO204AL
UZ5836
UZ5836
Microsemi Corporation
DIODE ZENER 36V 5W
2EZ6.8D5/TR12
2EZ6.8D5/TR12
Microsemi Corporation
DIODE ZENER 6.8V 2W DO204AL
3EZ130DE3/TR8
3EZ130DE3/TR8
Microsemi Corporation
DIODE ZENER 130V 3W DO204AL
3EZ3.6D2/TR8
3EZ3.6D2/TR8
Microsemi Corporation
DIODE ZENER 3.6V 3W DO204AL
3EZ4.7D10E3/TR8
3EZ4.7D10E3/TR8
Microsemi Corporation
DIODE ZENER 4.7V 3W DO204AL
APT30N60SC6
APT30N60SC6
Microsemi Corporation
MOSFET N-CH 600V 30A D3PAK
A3PE600-PQ208
A3PE600-PQ208
Microsemi Corporation
IC FPGA 147 I/O 208QFP
SG3843M
SG3843M
Microsemi Corporation
IC REG CTRLR BUCK 8DIP
LX8117B-33CST
LX8117B-33CST
Microsemi Corporation
IC REG LIN 3.3V 1.2A SOT223 PWR
LXM1617-12-42
LXM1617-12-42
Microsemi Corporation
MOD INVERTER CCFL 4W 12V PROG