MS105/TR12
  • Share:

Microsemi Corporation MS105/TR12

Manufacturer No:
MS105/TR12
Manufacturer:
Microsemi Corporation
Package:
Tape & Reel (TR)
Datasheet:
MS105/TR12 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:690 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 50 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
480

Please send RFQ , we will respond immediately.

Similar Products

Part Number MS105/TR12 MS106/TR12   MS108/TR12   MS109/TR12   MS104/TR12  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 60 V 80 V 90 V 40 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 690 mV @ 1 A 690 mV @ 1 A 810 mV @ 1 A 810 mV @ 1 A 690 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 100 µA @ 50 V 100 µA @ 60 V 100 µA @ 80 V 100 µA @ 90 V 100 µA @ 40 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SK42BL-TP
SK42BL-TP
Micro Commercial Co
DIODE SCHOTTKY 20V 4A DO214AA
PMEG4005ESFC315
PMEG4005ESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
SB36AFC-AU_R1_000A1
SB36AFC-AU_R1_000A1
Panjit International Inc.
SMAF-C, SKY
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BAS21W
BAS21W
Diotec Semiconductor
DIODE SOT-323 250V 0.2A 50NS
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
GL41MHE3/96
GL41MHE3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO213AB
UG4B-E3/73
UG4B-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 4A DO201AD
TSPB5H120S S1G
TSPB5H120S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 5A SMPC4.0
1N1347R
1N1347R
Solid State Inc.
DO4 6 AMP SILICON RECTIFIER
BYX10GPHE3/73
BYX10GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 360MA DO204
CD1005-B0230
CD1005-B0230
Bourns Inc.
DIODE SCHOTTKY 30V 200MA 1005

Related Product By Brand

SMCJ5630/TR13
SMCJ5630/TR13
Microsemi Corporation
TVS DIODE 6.05VWM 11.7VC DO214AB
SMCJ6050/TR13
SMCJ6050/TR13
Microsemi Corporation
TVS DIODE 24VWM 43.5VC DO214AB
MXLP5KE48AE3
MXLP5KE48AE3
Microsemi Corporation
TVS DIODE 48VWM 77.4VC DO204AL
1N5944DG
1N5944DG
Microsemi Corporation
DIODE ZENER 62V 1.25W DO204AL
1N5945DG
1N5945DG
Microsemi Corporation
DIODE ZENER 68V 1.25W DO204AL
1N5948DG
1N5948DG
Microsemi Corporation
DIODE ZENER 91V 1.25W DO204AL
3EZ27D2E3/TR8
3EZ27D2E3/TR8
Microsemi Corporation
DIODE ZENER 27V 3W DO204AL
1N4713 (DO35)
1N4713 (DO35)
Microsemi Corporation
DIODE ZENER 30V 500MW DO35
1N5266A (DO-35)
1N5266A (DO-35)
Microsemi Corporation
DIODE ZENER 68V 500MW DO35
APT10043JVR
APT10043JVR
Microsemi Corporation
MOSFET N-CH 1000V 22A ISOTOP
M1A3P600L-FG256I
M1A3P600L-FG256I
Microsemi Corporation
IC FPGA 177 I/O 256FBGA
LXMG1930-28-04
LXMG1930-28-04
Microsemi Corporation
LED DRIVER CC BOOST 35V 50MA