MS104/TR12
  • Share:

Microsemi Corporation MS104/TR12

Manufacturer No:
MS104/TR12
Manufacturer:
Microsemi Corporation
Package:
Tape & Reel (TR)
Datasheet:
MS104/TR12 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 40V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:690 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 40 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
65

Please send RFQ , we will respond immediately.

Similar Products

Part Number MS104/TR12 MS105/TR12   MS106/TR12   MS108/TR12   MS109/TR12  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 50 V 60 V 80 V 90 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 690 mV @ 1 A 690 mV @ 1 A 690 mV @ 1 A 810 mV @ 1 A 810 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 100 µA @ 40 V 100 µA @ 50 V 100 µA @ 60 V 100 µA @ 80 V 100 µA @ 90 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BY254
BY254
Diotec Semiconductor
DIODE STD DO-201 800V 3A
DFLS1150-7
DFLS1150-7
Diodes Incorporated
DIODE SCHOTTKY 150V POWERDI123
GB02SHT01-46
GB02SHT01-46
GeneSiC Semiconductor
DIODE SCHOTTKY 100V 4A
JANTX1N5811
JANTX1N5811
Microchip Technology
DIODE GEN PURP 150V 3A AXIAL
SE07PJ-M3/85A
SE07PJ-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 700MA DO220
ESGLW
ESGLW
Taiwan Semiconductor Corporation
DIODE, SUPER FAST
VS-2EGH02-M3/5BT
VS-2EGH02-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 2A DO214AA
ES2AAHR3G
ES2AAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AC
AR3PGHM3_A/H
AR3PGHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.8A TO277A
TRA2525
TRA2525
onsemi
DIODE GP 250V 25A MICRODE BUTTON
RS1GHR3G
RS1GHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
SF53-AP
SF53-AP
Micro Commercial Co
DIODE GPP HE 5A DO-201AD

Related Product By Brand

MXLP5KE7.0CA
MXLP5KE7.0CA
Microsemi Corporation
TVS DIODE 7VWM 12VC DO204AL
1N5917CG
1N5917CG
Microsemi Corporation
DIODE ZENER 4.7V 1.25W DO204AL
1EZ110DE3/TR12
1EZ110DE3/TR12
Microsemi Corporation
DIODE ZENER 110V 1W DO204AL
1N5951BPE3/TR12
1N5951BPE3/TR12
Microsemi Corporation
DIODE ZENER 120V 1.5W DO204AL
2EZ100D5E3/TR12
2EZ100D5E3/TR12
Microsemi Corporation
DIODE ZENER 100V 2W DO204AL
2EZ11DE3/TR12
2EZ11DE3/TR12
Microsemi Corporation
DIODE ZENER 11V 2W DO204AL
1N5951BP/TR8
1N5951BP/TR8
Microsemi Corporation
DIODE ZENER 120V 1.5W DO204AL
3EZ140D5/TR8
3EZ140D5/TR8
Microsemi Corporation
DIODE ZENER 140V 3W DO204AL
1N5221B (DO-35)
1N5221B (DO-35)
Microsemi Corporation
DIODE ZENER 24V 500MW DO35
1N5249B (DO-35)
1N5249B (DO-35)
Microsemi Corporation
DIODE ZENER 19V 500MW DO35
JANTX2N4857
JANTX2N4857
Microsemi Corporation
JFET N-CH 40V 360MW TO-18
NX2305CSTR
NX2305CSTR
Microsemi Corporation
IC PWM CONTROLLER