Microsemi Corporation-MRF904 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	4GHz
Noise Figure (dB Typ @ f):	1.5dB @ 450MHz
Gain:	6.5dB ~ 10.5dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AF, TO-72-4 Metal Can
Supplier Device Package:	TO-72

Microsemi Corporation MRF904