MRF581G
  • Share:

Microsemi Corporation MRF581G

Manufacturer No:
MRF581G
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
MRF581G Datasheet
ECAD Model:
-
Description:
RF TRANS NPN 18V 5GHZ MICRO X
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):18V
Frequency - Transition:5GHz
Noise Figure (dB Typ @ f):3dB ~ 3.5dB @ 500MHz
Gain:13dB ~ 15.5dB
Power - Max:1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 50mA, 5V
Current - Collector (Ic) (Max):200mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Micro-X ceramic (84C)
Supplier Device Package:Micro-X ceramic (84C)
0 Remaining View Similar

In Stock

-
274

Please send RFQ , we will respond immediately.

Similar Products

Part Number MRF581G MRF586G   MRF581   MRF5812   MRF5812G   MRF581A   MRF581AG  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 18V 17V 18V 15V 15V 15V 15V
Frequency - Transition 5GHz 3GHz 5GHz 5GHz 5GHz 5GHz 5GHz
Noise Figure (dB Typ @ f) 3dB ~ 3.5dB @ 500MHz - 3dB ~ 3.5dB @ 500MHz 2dB ~ 3dB @ 500MHz 2dB ~ 3dB @ 500MHz 3dB ~ 3.5dB @ 500MHz 3dB ~ 3.5dB @ 500MHz
Gain 13dB ~ 15.5dB 13.5dB 13dB ~ 15.5dB 13dB ~ 15.5dB 13dB ~ 15.5dB 13dB ~ 15.5dB 13dB ~ 15.5dB
Power - Max 1.25W 1W 1.25W 1.25W 1.25W 1.25W 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V 40 @ 50mA, 5V 50 @ 50mA, 5V 50 @ 50mA, 5V 50 @ 50mA, 5V 90 @ 50mA, 5V 90 @ 50mA, 5V
Current - Collector (Ic) (Max) 200mA 200mA 200mA 200mA 200mA 200mA 200mA
Operating Temperature 150°C (TJ) - 150°C (TJ) - - 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case Micro-X ceramic (84C) TO-205AD, TO-39-3 Metal Can Micro-X ceramic (84C) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) Micro-X ceramic (84C) Macro-X
Supplier Device Package Micro-X ceramic (84C) TO-39 Micro-X ceramic (84C) 8-SOIC 8-SO Micro-X ceramic (84C) Macro-X

Related Product By Categories

AT-41533-TR1
AT-41533-TR1
Broadcom Limited
RF TRANS NPN 12V SOT23
KSC1730OTA
KSC1730OTA
onsemi
RF TRANS NPN 15V 1.1GHZ TO92-3
NE851M03-A
NE851M03-A
CEL
RF TRANS NPN 5.5V 4.5GHZ SOT363
BF240_J35Z
BF240_J35Z
onsemi
RF TRANS NPN 40V 1.1GHZ TO92-3
2SA1748GRL
2SA1748GRL
Panasonic Electronic Components
RF TRANS PNP 50V 250MHZ SMINI3
2SA1790GCL
2SA1790GCL
Panasonic Electronic Components
RF TRANS PNP 20V 300MHZ SSMINI3
START499D
START499D
STMicroelectronics
RF TRANS NPN 4.5V SOT89
MS1409
MS1409
Microsemi Corporation
RF TRANS NPN 40V 175MHZ TO39
MRF586G
MRF586G
Microsemi Corporation
RF TRANS NPN 17V 3GHZ TO39
2SC5754-A
2SC5754-A
CEL
RF TRANS NPN 5V 20GHZ SOT343F
MRF4427G
MRF4427G
Microsemi Corporation
RF TRANS NPN 20V 8SO
MPSH10-AP
MPSH10-AP
Micro Commercial Co
TRANSISTOR TO-92

Related Product By Brand

SMCJ5629AE3/TR13
SMCJ5629AE3/TR13
Microsemi Corporation
TVS DIODE 5.8VWM 10.5VC DO214AB
SMCJ5632/TR13
SMCJ5632/TR13
Microsemi Corporation
TVS DIODE 7.37VWM 13.8VC DO214AB
JANTX1N4492CUS
JANTX1N4492CUS
Microsemi Corporation
DIODE ZENER 130V 1.5W D5A
1N5236BDO35E3
1N5236BDO35E3
Microsemi Corporation
DIODE ZENER 7.5V 500MW DO35
2EZ7.5D10E3/TR12
2EZ7.5D10E3/TR12
Microsemi Corporation
DIODE ZENER 7.5V 2W DO204AL
3EZ17DE3/TR12
3EZ17DE3/TR12
Microsemi Corporation
DIODE ZENER 17V 3W DO204AL
3EZ3.9D10/TR12
3EZ3.9D10/TR12
Microsemi Corporation
DIODE ZENER 3.9V 3W DO204AL
3EZ39D/TR12
3EZ39D/TR12
Microsemi Corporation
DIODE ZENER 39V 3W DO204AL
3EZ62D5/TR12
3EZ62D5/TR12
Microsemi Corporation
DIODE ZENER 62V 3W DO204AL
SMBJ4763CE3/TR13
SMBJ4763CE3/TR13
Microsemi Corporation
DIODE ZENER 91V 2W SMBJ
1N4763APE3/TR8
1N4763APE3/TR8
Microsemi Corporation
DIODE ZENER 91V 1W DO204AL
1N4101 (DO35)
1N4101 (DO35)
Microsemi Corporation
DIODE ZENER 8.2V 400MW DO35