Microsemi Corporation-JANTXV2N6249T1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	200 V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1A, 10A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 10A, 3V
Power - Max:	6 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package:	TO-254AA

Microsemi Corporation JANTXV2N6249T1