JANTXV2N5012S
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Microsemi Corporation JANTXV2N5012S

Manufacturer No:
JANTXV2N5012S
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
JANTXV2N5012S Datasheet
ECAD Model:
-
Description:
TRANS NPN 700V 0.2A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):700 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 25mA, 10V
Power - Max:1 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
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Similar Products

Part Number JANTXV2N5012S JANTXV2N5013S   JANTXV2N5014S   JANTXV2N5015S   JANTXV2N5012  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 700 V 800 V 900 V 1000 V 700 V
Vce Saturation (Max) @ Ib, Ic - - - - -
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 25mA, 10V 30 @ 20mA, 10V 30 @ 20mA, 10V 30 @ 20mA, 10V 30 @ 25mA, 10V
Power - Max 1 W 1 W 1 W 1 W 1 W
Frequency - Transition - - - - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-39 (TO-205AD) TO-39 (TO-205AD) TO-39 (TO-205AD) TO-39 (TO-205AD) TO-5

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