JANTXV2N3735
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Microsemi Corporation JANTXV2N3735

Manufacturer No:
JANTXV2N3735
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
JANTXV2N3735 Datasheet
ECAD Model:
-
Description:
TRANS NPN 40V 1.5A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:900mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 1A, 1.5V
Power - Max:1 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39
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Similar Products

Part Number JANTXV2N3735 JANTXV2N3735L   JANTXV2N3737   JANTXV2N335   JANTXV2N3725  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Discontinued at Digi-Key Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A - 500 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 45 V 50 V
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A 900mV @ 100mA, 1A 900mV @ 100mA, 1A - -
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 1.5V 20 @ 1A, 1.5V 20 @ 1A, 1.5V - -
Power - Max 1 W 1 W 500 mW - -
Frequency - Transition - - - - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) 175°C (TJ) 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AA, TO-5-3 Metal Can TO-206AB, TO-46-3 Metal Can TO-205AA, TO-5-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 TO-5 TO-46-3 TO-5 TO-39 (TO-205AD)

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