JANTXV1N6622U
  • Share:

Microsemi Corporation JANTXV1N6622U

Manufacturer No:
JANTXV1N6622U
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
JANTXV1N6622U Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 1.2A A-MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1.2A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$17.16
14

Please send RFQ , we will respond immediately.

Similar Products

Part Number JANTXV1N6622U JANTXV1N6623U   JANTXV1N6624U   JANTXV1N6625U   JANTXV1N6622US   JANTXV1N6620U   JANTXV1N6621U   JANTXV1N6622  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microchip Technology Microsemi Corporation Microsemi Corporation Microchip Technology
Product Status Active Active Active Active Discontinued at Digi-Key Active Active Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V 900 V 1000 V 660 V 200 V 400 V 660 V
Current - Average Rectified (Io) 1.2A 1A 1A 1A 1.2A 1.2A 1.2A 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A 1.55 V @ 1 A 1.55 V @ 1 A 1.75 V @ 1 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 50 ns 50 ns 60 ns 30 ns 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 600 V 500 nA @ 800 V 500 nA @ 900 V 1 µA @ 1000 V 500 nA @ 660 V 500 nA @ 200 V 500 nA @ 400 V 500 nA @ 660 V
Capacitance @ Vr, F - - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A A, Axial
Supplier Device Package D-5A D-5A D-5A D-5A D-5A D-5A D-5A -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

FR3K
FR3K
Diotec Semiconductor
DIODE FR SMC 800V 3A
NTE6118
NTE6118
NTE Electronics, Inc
R-1200PRV 2200A
VS-70HF10
VS-70HF10
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 70A DO203AB
ES1LDH
ES1LDH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
UFS115JE3/TR13
UFS115JE3/TR13
Microchip Technology
DIODE GEN PURP 150V 1A DO214BA
VS-86HF120
VS-86HF120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 85A DO203AB
SSL110A-F1-0000HF
SSL110A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 100V 1A DO214AC
MBRD835L-T
MBRD835L-T
Diodes Incorporated
DIODE SCHOTTKY 35V 8A DPAK
LL101B-13
LL101B-13
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
SF12GHR1G
SF12GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
FR205-TP
FR205-TP
Micro Commercial Co
DIODE GPP GAST 2A DO-15
RB075BGE40STL
RB075BGE40STL
Rohm Semiconductor
40V, 5A, TO-252 (DPAK), SCHOTTKY

Related Product By Brand

SMCJ5638/TR13
SMCJ5638/TR13
Microsemi Corporation
TVS DIODE 12.9VWM 23.5VC DO214AB
SMCJ5652/TR13
SMCJ5652/TR13
Microsemi Corporation
TVS DIODE 50.2VWM 89VC DO214AB
MXP5KE90CA
MXP5KE90CA
Microsemi Corporation
TVS DIODE 90VWM 146VC DO204AL
PD-IM-7604+4T4H
PD-IM-7604+4T4H
Microsemi Corporation
COMPACT EVB 4 TYPE4 & 4 AT PD692
MSDM100-16
MSDM100-16
Microsemi Corporation
BRIDGE RECT 3P 1.6KV 100A M2-1
1N5281BDO35TR
1N5281BDO35TR
Microsemi Corporation
DIODE ZENER 200V 500MW DO35
2EZ14D10E3/TR12
2EZ14D10E3/TR12
Microsemi Corporation
DIODE ZENER 14V 2W DO204AL
3EZ13D2E3/TR12
3EZ13D2E3/TR12
Microsemi Corporation
DIODE ZENER 13V 3W DO204AL
SMAJ5952E3/TR13
SMAJ5952E3/TR13
Microsemi Corporation
DIODE ZENER 130V 3W DO214AC
2EZ180D2E3/TR8
2EZ180D2E3/TR8
Microsemi Corporation
DIODE ZENER 180V 2W DO204AL
MRF553T
MRF553T
Microsemi Corporation
RF TRNS NPN 16V 175MHZ PWR MACRO
MT8814AE1
MT8814AE1
Microsemi Corporation
IC ANLG SWITCH ARRAY 8X12 40DIP