JANTX1N6629
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Microsemi Corporation JANTX1N6629

Manufacturer No:
JANTX1N6629
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
JANTX1N6629 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 880V 1.4A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 880 V
Capacitance @ Vr, F:40pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:E, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
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$14.16
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Similar Products

Part Number JANTX1N6629 JANTX1N6620   JANTX1N6622   JANTX1N6625   JANTX1N6627  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 880 V 220 V 660 V 1100 V 440 V
Current - Average Rectified (Io) 1.4A 2A 2A 1A 1.75A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.4 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.75 V @ 1 A 1.35 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 30 ns 30 ns 60 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 880 V 500 nA @ 220 V 500 nA @ 660 V 500 nA @ 1100 V 2 µA @ 440 V
Capacitance @ Vr, F 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case E, Axial A, Axial A, Axial A, Axial E, Axial
Supplier Device Package - Axial - - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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