Microsemi Corporation-JAN2N4957 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	PNP
Voltage - Collector Emitter Breakdown (Max):	30V
Frequency - Transition:	-
Noise Figure (dB Typ @ f):	3.5dB @ 450MHz
Gain:	25dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-72-3 Metal Can
Supplier Device Package:	TO-72

Microsemi Corporation JAN2N4957