Microsemi Corporation-JAN2N3960 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	-
Voltage - Collector Emitter Breakdown (Max):	12 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 3mA, 30mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 10mA, 1V
Power - Max:	400 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AA, TO-18-3 Metal Can
Supplier Device Package:	TO-18 (TO-206AA)

Microsemi Corporation JAN2N3960